Fundamental Relations in MOSFET

Electric Field
 –fundamental equation
•electric field: E = V/d–vertical field through gate oxide
•determines charge induced in channel
–horizontal field across channel
•determines source-to-drain current flow

Capacitance
–fundamental equations
•capacitor charge: Q = CV
•capacitance: C = εA/d
–charge balance on capacitor, Q+ = Q-
•charge on gate is balanced by charge in channel
•what is the source of channel charge? where does it come from?

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What is a MOSFET?

• Digital integrated circuits rely on transistor switches
– most common device for digital and mixed signal: MOSFET

• Definitions
– MOS = Metal Oxide Semiconductor
• physical layers of the device
– FET = Field Effect Transistor
• What field? What does the field do?
• Are other fields important?
– CMOS = Complementary MOS
• use of both nMOS and pMOS to form a circuit
• Primary Features
– gate
– gate oxide (insulator)
– source and drain
– bulk/substrate
– channel


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Integrated Circuit Technologies

•“Technologies”for digital ICs–passive (inert) circuits:
 •resistors and capacitors only, no transistors–active circuits; with transistors
•III-V devices (compound semic.)•MOS and Bipolar devices (silicon)
•ECE410 will cover CMOS because…
•CMOS dominates the semiconductor/IC industry–Silicon is cheaper􀃎preferred over other materials–physicsof CMOS is easierto understand–CMOS is easier to implement/fabricate–CMOS provides lower power-delay product–CMOS is lowest power–density: can get moreCMOS transistors/functions in same chip area
•BUT! CMOS is notthe fastest technology!–BJT and III-V devices are faster



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